This article is cited in 11 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells

D. A. Firsov^a, L. E. Vorob'ev^a, M. Ya. Vinnichenko^a, R. M. Balagula^a, M. M. Kulagina^b, A. P. Vasil'ev<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: The photoluminescence and intersubband absorption spectra are studied in GaAs/AlGaAs tunnel-coupled quantum well structures. The peak positions in the photoluminescence and absorption spectra are consistent with the theoretically calculated energies of optical carrier transitions. The effect of a transverse electric field and temperature on intersubband light absorption is studied. It is caused by electron redistribution between the size-quantization levels and a variation in the energy spectrum of quantum wells. The variation in the refractive index in the energy region of observed intersubband transitions is estimated using Kramers–Kronig relations.

Received: 22.04.2015
Accepted: 12.05.2015

 English version: Semiconductors, 2015, 49:11, 1425–1429

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