D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11,Pages <nobr>1463

This article is cited in 24 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

D. V. Yurasov^ab, A. I. Bobrov^b, V. M. Daniltsev^a, A. V. Novikov^ab, D. A. Pavlov^b, E. V. Skorokhodov^a, M. V. Shaleev^a, P. A. Yunin^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 $\mu$m with a low threading dislocation density on the order of 10$^7$ cm$^{-2}$and a root mean square roughness of less than 1 nm are obtained.

Received: 22.04.2015
Accepted: 12.05.2015