A. V. Antonov, M. N. Drozdov, A. V. Novikov, D. V. Yurasov, “Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11,Pages <nobr>1453

This article is cited in 2 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

A. V. Antonov^a, M. N. Drozdov^ab, A. V. Novikov^ab, D. V. Yurasov^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325$^\circ$C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

Received: 22.04.2015
Accepted: 12.05.2015