This article is cited in 2 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

A. S. Bolshakov^a, V. V. Chaldyshev^abc, A. V. Babichev^abd, D. A. Kudriashov^b, A. S. Gudovskikh^be, I. A. Morozov^b, M. S. Sobolev^b, E. V. Nikitina<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Peter the Great St. Petersburg Polytechnic University
^d Connector Optics LLC, St. Petersburg
^e Saint Petersburg Electrotechnical University "LETI"

Abstract: A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.

Received: 22.04.2015
Accepted: 12.05.2015

 English version: Semiconductors, 2015, 49:11, 1400–1404

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