This article is cited in 2 papers

Semiconductor physics

Effect of catalytic surface modification on the gas sensitivity of SnO$_2$+3% SiO$_2$ films

S. I. Rembeza^a, E. S. Rembeza^a, N. N. Kosheleva^a, V. M. Al Tameemi<sup>b

a</sup> Voronezh State Technical University
^b University of Diyala, Daila, Republic Iraq

Abstract: Thin SnO$_2$+3% SiO$_2$ (250 nm) films grown by magnetron sputtering in a controlled Ar + O$_2$ atmosphere are used as sensor elements in a gas sensor fabricated by microelectronics technology. The sensor contains two sensitive elements, one of which is used as a control element; the surface of the other was coated with an aqueous solution (3, 6, 9, 12 mmol) of silver nitrate Ag(NO$_3$) and palladium chloride PdCl$_2$. It is found that surface modification by catalysts lowers the temperature of the maximum gas sensitivity of SnO$_2$+3% SiO$_2$ by 100–200$^\circ$C; in some cases, this procedure also increases the maximum gas sensitivity several times.

Received: 15.01.2015
Accepted: 05.02.2015

 English version: Semiconductors, 2015, 49:9, 1237–1241

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