This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Defect-related luminescence in silicon $p^+$–$n$ junctions

R. V. Kuz'min^a, N. T. Bagraev^ab, L. E. Klyachkin^a, A. M. Malyarenko<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Ultra-shallow $p^+$–$n$ junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into $n$-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO$_2$ by electron lithography and reactive ion etching are examined. The electroand photoluminescence spectra measured in the study demonstrate emission in the range 1–1.6 $\mu$m, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage.

Received: 05.03.2015
Accepted: 13.03.2015

 English version: Semiconductors, 2015, 49:9, 1222–1225

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