V. Ya. Aleshkin, “On the cascade capture of electrons at donors in GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 9,Pages <nobr>1233

Semiconductor structures, low-dimensional systems, quantum phenomena

On the cascade capture of electrons at donors in GaAs quantum wells

V. Ya. Aleshkin^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

Received: 12.01.2015
Accepted: 25.02.2015