This article is cited in 1 paper

Surface, interfaces, thin films

On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects

V. B. Bondarenko, A. V. Filimonov

Peter the Great St. Petersburg Polytechnic University

Abstract: Natural irregularities of the electric potential on the surface of a semiconductor under conditions of the partial self-assembly of electrically active defects, i.e., on the formation of donor–acceptor pairs in depletion layers, are studied. The amplitude and character of the spatial distribution of the chaotic potential on the surface of a semiconductor in the cases of localized and delocalized states are determined. The dependence of the amplitude of the chaotic potential on the degree of compensation of the semiconductor is obtained.

Received: 17.02.2015
Accepted: 26.02.2015

 English version: Semiconductors, 2015, 49:9, 1187–1190

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