This article is cited in 14 papers

Spectroscopy, interaction with radiation

On the luminescence of freshly introduced $a$-screw dislocations in low-resistance GaN

O. S. Medvedev, O. F. Vyvenko, A. S. Bondarenko

Saint Petersburg State University

Abstract: Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1–3.2 eV at 70 K. The spectral composition of dislocation luminescence shows a fine doublet structure with a component width of $\sim$ 15 meV and splitting of $\sim$ 30 meV, accompanied by LO-phonon replicas. Luminescent screw dislocations move upon exposure to an electron beam and at low temperatures, but retain immobility for a long time without external excitation. Optical transitions involving the quantum-well states of a stacking fault in a split-dislocation core are considered to be the most probable mechanism of the observed phenomenon.

Received: 25.02.2015
Accepted: 03.03.2015

 English version: Semiconductors, 2015, 49:9, 1181–1186

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