This article is cited in 2 papers

Spectroscopy, interaction with radiation

An origin of orange (2 eV) photoluminescence in SiO$_2$ films implanted with high Si$^+$-ion doses

I. E. Tyschenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The photoluminescence and photoluminescence excitation spectra of SiO$_2$ films implanted with high (3 at%) Si+-ion doses are studied in relation to the temperature of postimplantation annealing. It is shown that two photoluminescence bands with peaks at 2.7 and 2 eV are dominant in the spectra. As the annealing temperature is increased, the relation between the intensities of the 2.7 and 2 eV bands changes in favor of the former one. Both of the photoluminescence bands have their main excitation peak at the energy 5.1 eV. The excitation spectrum of the $\sim$ 2-eV band exhibits also peaks at 3.8 and 4.6 eV. It is concluded that, in the implanted SiO$_2$ films, the orange photoluminescence band originates from radiative transitions between levels of centers associated with a deficiency of oxygen ($\equiv$ Si–Si $\equiv$ or =Si:) and the levels of nonbridging oxygen ($\equiv$ Si–O$\bullet$).

Received: 17.02.2015
Accepted: 25.02.2015

 English version: Semiconductors, 2015, 49:9, 1176–1180

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