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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 9, Pages 1175–1179 (Mi phts7377)

Electronic properties of semiconductors

Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B

O. V. Koplaka, E. A. Steinmanb, A. N. Tereshchenkob, R. B. Morgunovac

a Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Chernogolovka, Moscow region
b Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
c Moscow State Humanitarian University named after M. A. Sholokhov

Abstract: A correlation between the temperature dependences of the $D1$-line intensity of dislocation luminescence and the magnetic moment of plastically deformed isotopically enriched crystals $^{29}$Si:B is found. It is established that the magnetic susceptibility of the deformed crystals obtained by integration of the spectra of electron spin resonance and the $D1$-line intensity undergo similar nonmonotonic variations with temperature varying in the range of 20–32 K.

Received: 12.01.2015
Accepted: 06.02.2015


 English version:
Semiconductors, 2015, 49:9, 1140–1144

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