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Electronic properties of semiconductors

Negative differential conductivity in $n$-Si structures with contacts asymmetric in area

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov

Abstract: The physical mechanism of the occurrence of negative differential conductivity in $n$-Si structures with contacts that are highly asymmetric in area is considered. It is shown that the effect is related to the formation of a steady variband region near the point contact of the structure caused by thermoelastic strain of the crystal at nonuniform Joule heating.

Received: 20.05.2014
Accepted: 05.02.2015

 English version: Semiconductors, 2015, 49:9, 1125–1128

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