Semiconductor physics

Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes at low temperatures (77 K)

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

Ioffe Institute, St. Petersburg

Abstract: The low temperature (77 K) transient switch-on characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes are measured in the pulse mode. Using a simple analytical model, the effect of impurity breakdown in a heavily doped $p^+$-type emitter on the current rise dynamics after applying high-amplitude forward-bias pulses to the diode is explained.

Received: 18.11.2014
Accepted: 25.11.2014

 English version: Semiconductors, 2015, 49:7, 976–979

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