This article is cited in 1 paper

Semiconductor physics

Avalanche mode of high-voltage overloaded $p^+$–$i$–$n^+$ diode switching to the conductive state by pulsed illumination

A. S. Kyuregyan

Russian Electrotechnical Institute Named after V. I. Lenin

Abstract: A simple analytical theory of the picosecond switching of high-voltage overloaded $p^+$–$i$–$n^+$ photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

Received: 20.11.2014
Accepted: 20.11.2014

 English version: Semiconductors, 2015, 49:7, 967–971

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