This article is cited in 5 papers

Micro- and nanocrystalline, porous, composite semiconductors

Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

V. I. Vasil’ev^ab, G. S. Gagis^a, V. I. Kuchinskii^ac, V. G. Danl'chenko<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c Peter the Great St. Petersburg Polytechnic University

Abstract: Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAs$_{1-x}$P$_x$, GaAs$_x$Sb$_{1-x}$, and GaP$_x$Sb$_{1-x}$ layers with thicknesses of 10–20 nm and a content x of the embedded components of up to 0.04.

Received: 18.12.2014
Accepted: 25.12.2014

 English version: Semiconductors, 2015, 49:7, 962–966

Bibliographic databases:

•