Semiconductor structures, low-dimensional systems, quantum phenomena

Resistance of 4H-SiC Schottky barriers at high forward-current densities

P. A. Ivanov, T. P. Samsonova, N. D. Il'inskaya, O. Yu. Serebrennikova, O. I. Kon'kov, A. S. Potapov

Ioffe Institute, St. Petersburg

Abstract: The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.

Received: 17.12.2014
Accepted: 25.12.2014

 English version: Semiconductors, 2015, 49:7, 930–934

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