D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, “Nitridation of an unreconstructed and reconstructed <nobr>$(\sqrt{31}\times\sqrt{31})R\pm9^\circ$</nobr> (0001) sapphire surface in an ammonia flow”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 7,Pages <nobr>925

This article is cited in 2 papers

Surface, interfaces, thin films

Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow

D. S. Milakhin^a, T. V. Malin^a, V. G. Mansurov^a, Yu. G. Galitsyn^a, K. S. Zhuravlev^ab

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: This paper is devoted to the study of the nitridation of unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 $\times$ 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150$^\circ$C) resulting in sapphire surface reconstruction with formation of the $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.

Received: 12.11.2014
Accepted: 25.11.2014