Electronic properties of semiconductors

Behavior of the Fe impurity in Hg$_3$In$_2$Te$_6$

O. G. Grushka, A. I. Savchuk, S. N. Chupyra, S. V. Bilichuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at $E_c$ – 0.69 eV in Hg$_3$In$_2$Te$_6$ crystals. When light is absorbed by Fe$^{2+}$ impurity centers, both electronic transitions of the impurity-level–conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe$^{2+}$ centers.

Received: 02.12.2014
Accepted: 15.12.2014

 English version: Semiconductors, 2015, 49:7, 892–894

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