N. A. Sobolev, D. V. Danilov, O. V. Aleksandrov, A. S. Loshachenko, V. I. Sakharov, I. T. Serenkov, E. I. Shek, I. N. Trapeznikova, “Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3,Pages <nobr>418

This article is cited in 1 paper

Semiconductor physics

Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions

N. A. Sobolev^a, D. V. Danilov^ab, O. V. Aleksandrov^c, A. S. Loshachenko^ab, V. I. Sakharov^a, I. T. Serenkov^a, E. I. Shek^a, I. N. Trapeznikova^a

^a Ioffe Institute, St. Petersburg
^b St. Petersburg State University, Research Institute of Radiophysics
^c Saint Petersburg Electrotechnical University "LETI"

Abstract: It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the $p$–$n$ conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.

Received: 10.07.2014
Accepted: 25.08.2014