This article is cited in 1 paper

Semiconductor physics

Response of semiconductor nonlinear circuits to external perturbations

K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova

Daghestan Institute of Physics after Amirkhanov

Abstract: The current-transfer processes in circuits composed of nonlinear semiconductor elements with negative differential conductivity of the N type and their response to external harmonic and large-amplitude noise perturbation are experimentally investigated. Ambiguities are found on the current branches and portions with absolute negative conductivity of the I–V characteristics of these circuits. Under the noise action of a certain spectral composition and intensity, the N portions of the current branches on the I–V characteristics of the circuits are completely smoothed. In view of application, the obtained result can be used to remove the firing mode in excited neural networks.

Received: 10.04.2014
Accepted: 07.07.2014

 English version: Semiconductors, 2015, 49:3, 401–405

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