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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 3, Pages 392–398 (Mi phts7242)

This article is cited in 7 papers

Micro- and nanocrystalline, porous, composite semiconductors

Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir–Blodgett technique

A. A. Zarubanova, K. S. Zhuravlevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University

Abstract: The photoluminescence kinetics in CdS nanocrystals produced by the Langmuir–Blodgett technique is studied at a temperature of 5 K. The photoluminescence kinetics is described by the sum of two exponential functions, with characteristic times of about 30 and 160 ns. It is found that the fast and slow decay times become longer, as the nanocrystal size increases. Analysis of the data shows that the fast decay time is controlled by trion recombination in nanocrystals with defects, whereas the slow decay time is controlled by the annihilation of optically inactive excitons in nanocrystals without defects. It is established that, as the nanocrystal size is decreased, the fraction of imperfect nanocrystals is reduced because of an increase in the energy of defect formation.

Received: 04.08.2014
Accepted: 25.08.2014


 English version:
Semiconductors, 2015, 49:3, 380–386

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