This article is cited in 4 papers

Surface, interfaces, thin films

On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals

R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: Scanning atomic-force and electron microscopies are used to study the self-organization kinetics of nanoscale domains upon the deposition of submonolayer carbon coatings on silicon (100) in the microwave plasma of low-pressure ethanol vapor. Model mechanisms of how silicon-carbon domains are formed are suggested. The mechanisms are based on Langmuir’s model of adsorption from the precursor state and modern concepts of modification of the equilibrium structure of the upper atomic layer in crystalline semiconductors under the influence of external action.

Received: 29.04.2014
Accepted: 17.08.2014

 English version: Semiconductors, 2015, 49:3, 319–324

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