This article is cited in 2 papers

Spectroscopy, interaction with radiation

Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature

A. O. Zahar'in^a, A. V. Bobylev^ab, S. V. Egorov^ac, A. V. Andrianov<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Saint-Petersburg State Mining Institute

Abstract: Terahertz emission upon the band-to-band excitation of Group-IV semiconductors (Si:B and Ge:Ga) at room temperature by a semiconductor laser emitting in the visible range (660 nm) is observed and investigated. It is established that, as the crystal temperature is elevated above room temperature, the emission intensity increases considerably, while the emission spectrum shifts to higher frequencies. The terahertz-emission spectra of germanium and silicon are quite similar to each other. The pump-intensity dependence of the terahertz-emission intensity is nearly linear. The above features make it possible to attribute the observed terahertz emission to the effect of crystal heating by absorbed pump radiation.

Received: 23.07.2014
Accepted: 25.08.2014

 English version: Semiconductors, 2015, 49:3, 305–308

Bibliographic databases:

•