This article is cited in 3 papers

Electronic properties of semiconductors

Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150–200 K

A. P. Odrinsky

Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk

Abstract: The specific features of detecting the contribution of the characteristic intrinsic defect in semi-insulating GaAs to photocurrent relaxation are considered. A detailed analysis of the relaxation kinetics based on approximation by the sum of exponential components is presented. The approximation results are compared with the data of photo-induced current transient spectroscopy.

Received: 05.02.2014
Accepted: 03.06.2014

 English version: Semiconductors, 2015, 49:3, 285–289

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