This article is cited in 7 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Epitaxial growth of hexagonal silicon polytypes on sapphire

D. A. Pavlov, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov

Lobachevsky State University of Nizhny Novgorod

Abstract: The formation of a single-crystal silicon polytype is observed in silicon-on-sapphire structures by high-resolution transmission electron microscopy. The appearance of inclusions with a structure different from that of diamond is attributed to the formation of strong-twinning regions and the aggregation of stacking faults, which form their own crystal structure in the crystal lattice of silicon. It is demonstrated that the given modification belongs to the $9R$ silicon polytype.

Received: 23.05.2014
Accepted: 15.06.2014

 English version: Semiconductors, 2015, 49:1, 95–98

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