A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1,Pages <nobr>71

This article is cited in 7 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

A. S. Puzanov^a, S. V. Obolensky^a, V. A. Kozlov^ab

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device base. It is shown that, under some levels of irradiation, neutron radiation can bring about a decrease in the time of flight of hot electrons through the base, which retards the degradation of the transistor parameters.

Received: 23.05.2014
Accepted: 15.06.2014