This article is cited in 1 paper

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells

S. V. Khazanova^a, V. E. Degtyarov^a, N. V. Malekhonova^a, D. A. Pavlov^a, N. V. Baidus<sup>b

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: A comprehensive analysis of double tunnel-coupled InGaAs/GaAs quantum well heterostructures is carried out. The real composition profiles of the structures are obtained by high-resolution transmission electron microscopy and energy-dispersive spectrometry. The resultant profiles are compared with the profile obtained by computer simulation. By solving the Schrödinger equation in combination with the Poisson equation, the energy states for quantum-confined heterostructures with initially specified and real composition profiles are calculated. The influence of a number of factors, such as the well width, barrier thickness, and the background doping level on the properties of the heterostructure is thoroughly analyzed. In this manner, the optical characteristics and their dependence on the growth technology and geometric parameters of the structures are studied. Such an approach makes it possible to refine the real geometric parameters of wells and barriers and to correct the parameters of the structure and growth technology in order to improve the optical characteristics.

Received: 23.05.2014
Accepted: 15.06.2014

 English version: Semiconductors, 2015, 49:1, 55–59

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