This article is cited in 5 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers

S. V. Khazanova^a, V. E. Degtyarov^a, S. V. Tikhov^a, N. V. Baidus<sup>b

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: InGaAs/GaAs heterostructures containing quantum wells and $\delta$-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the $\delta$ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

Received: 23.05.2014
Accepted: 15.06.2014

 English version: Semiconductors, 2015, 49:1, 50–54

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