This article is cited in 19 papers

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

D. A. Firsov^a, L. E. Vorob'ev^a, V. Yu. Panevin^a, A. N. Sofronov^a, R. M. Balagula^a, I. S. Makhov^a, D. V. Kozlov^bc, A. P. Vasil'ev<sup>d

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod
^d Ioffe Institute, St. Petersburg

Abstract: Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical excitation of electron-hole pairs in $n$-type structures and impurity breakdown in a longitudinal electric field in $p$-type structures. The emission spectra are obtained. Emission is observed at low temperatures and shown to be determined by optical transitions between impurity states and transitions between the band and impurity states. Upon optical interband pumping, the impurity states are depopulated due to the recombination of electron-hole pairs with the involvement of impurities, while, in an electric field, the impurity states are depopulated due to impact ionization.

Received: 23.05.2014
Accepted: 15.06.2014

 English version: Semiconductors, 2015, 49:1, 28–32

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