Abstract:
A GaAs dynistors with mesa-strip has been fabricated and experimentally studied. It is shown that increasing the doping level of $n$- and $p$-emitters leads to a decrease in the turn-on time of GaAs dynistors and to an increase in their operation efficiency when generating nanosecond current pulses, namely to an increase in the amplitude and rate of rise of current and to a decrease in the rise time of the front.
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