A. V. Afanasyev, V. V. Zabrodskii, V. A. Ilyin, A. V. Serkov, V. V. Trushlyakova, D. A. Chigirev, “4<i>H</i>-SiC photodiodes with micronanostructured receiving surface”, Fizika i Tekhnika Poluprovodnikov, 2025, Volume 59, Issue 1,Pages <nobr>43

Semiconductor physics

4H-SiC photodiodes with micronanostructured receiving surface

A. V. Afanasyev^a, V. V. Zabrodskii^b, V. A. Ilyin^a, A. V. Serkov^a, V. V. Trushlyakova^a, D. A. Chigirev^a

^a Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: The possibility of using reactive-ion etching (RIE) to form broadband antireflective structures on the surface of photode- tector areas of 4H-SiC $p^+$–$n$–$n^+$-photodiodes was investigated. It is shown that during the RIE process utilizing aluminum masks (about 50 nm thick), along thinning of the upper $p^+$-epilayer, a self-ordered profiled surface with a dominant sharp relief of 600–800 nm is formed due to the effect of micromasking of SiC surface. The formation of this microprofiled surface allows to increase the sensitivity and EQY of 4H-SiC photodiodes.

Received: 20.02.2025
Revised: 14.04.2025
Accepted: 17.04.2025

DOI: 10.61011/FTP.2025.01.60499.7633