Semiconductor structures, low-dimensional systems, quantum phenomena

Stimulated emission in the heavily doped Al$_{0.68}$Ga$_{0.32}$N : Si structures with transverse optical pumping at room temperature

P. A. Bokhan^a, K. S. Zhuravlev^a, D. È. Zakrevskii^ab, T. V. Malin^a, I. V. Osinnykh^ac, N. V. Fateev<sup>ac

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State Technical University, 630073 Novosibirsk, Russia
^c Novosibirsk State University, 630090 Novosibirsk, Russia

Abstract: The broadband stimulated emission in the spectral range $\lambda$ = 380–700 nm with the inhomogeneous broadening has been experimentally obtined in the heavily doped Al$_{0.68}$Ga$_{0.32}$N : Si structures grown by molecular beam epitaxy. The behavior of the intensities and spectra of stimulated emission from the edge of the active element with transverse pulsed pumping by radiation with $\lambda$ = 266 nm, measured at room temperature, demonstrate the threshold behavior and optical gain. For stimulated emission with a maximum at $\lambda$ = 500 nm, the minimum threshold pump power density was 6.5 kW/cm$^2$ for excited region length of 1.5 mm. The parameters and contributions of the two main processes $e$–$A$ and $D$–$A$ of radiative recombination in the excited structures for stimulated emission and optical gain are studied.

Keywords: stimulated emission, heavily doped Al$_x$Ga$_{1-x}$N structures, luminescence, optical gain, donor-acceptor recombination.

Received: 21.11.2022
Revised: 16.12.2022
Accepted: 22.12.2022

DOI: 10.21883/FTP.2022.12.54511.4349

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