Semiconductor physics

Influence of a multilayer grounded field plate on the effect of quasi-saturation of current-voltage chatacteristics of power radio frequence lateral transistors

R. P. Alekseev, P. L. Kurshev, A. N. Tsotsorin

Research Institute of Electronic Engineering, 394033 Voronezh, Russia

Abstract: Was been performed modeling of LDMOS-transistor structures with two- and three-layer grounded field plates. On both structures the manifestation of the effect of quasi-saturation of $I_D$–$V_D$ characteristics was estimated. It is shown that the new design of the three-layer grounded field plate significantly suppresses the effect of quasi-saturation.

Keywords: power RF transistors, LDMOS, quasi-saturation of $I$–$V$ characteristics.

Received: 10.10.2022
Revised: 08.11.2022
Accepted: 08.11.2022

DOI: 10.21883/FTP.2022.11.54260.9975

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