A. V. Afanasyev, V. V. Zabrodskii, V. A. Ilyin, V. V. Luchinin, A. V. Nikolaev, A. V. Serkov, V. V. Trushlyakova, D. A. Chigirev, “Application of RIE-technology to control responsivity of 4<i>H</i>-SiC photodiodes”, Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 10,Pages <nobr>997

Semiconductor physics

Application of RIE-technology to control responsivity of 4H-SiC photodiodes

A. V. Afanasyev^a, V. V. Zabrodskii^b, V. A. Ilyin^a, V. V. Luchinin^a, A. V. Nikolaev^b, A. V. Serkov^a, V. V. Trushlyakova^a, D. A. Chigirev^a

^a Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: The possibility to increase the responsivity of 4H-SiC $p^+$–$n$–$n^+$-photodiodes by varying the thickness of the $p^+$-epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation of dark electrical characteristics.

Keywords: 4H-SiC, $p^+$–$n$–$n^+$-photodiode, UV-range, $p^+$-epilayer, reactive ion etching RIE, responsivity.

Received: 30.06.2022
Revised: 03.08.2022
Accepted: 12.08.2022

DOI: 10.21883/FTP.2022.10.53962.9926