Semiconductor structures, low-dimensional systems, quantum phenomena

Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties

M. O. Petrushkov^a, M. A. Putyato^a, A. V. Vasev^a, D. S. Abramkin^ab, E. A. Emelyanov^a, I. D. Loshkarev^a, O. S. Komkov^c, D. D. Firsov^c, V. V. Preobrazhenskii<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State University, 630090 Novosibirsk, Russia
^c Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia

Abstract: GaSb films were grown by molecular beam epitaxy on vicinal Si(001) substrates with miscut angles of 6$^\circ$ to the (111) plane. Films were formed on AlSb(001)/Al/As/Si, AlSb$(00\bar1)$/Al/As/Si, GaSb(001)/Ga/P/Si и GaSb$(00\bar1)$/P/Ga/Si and GaSb(001)/P/Ga/Si transition layers. The influence of orientation, composition, and formation conditions of transition layers on the crystal perfection and optical properties of GaSb films was studied. The GaSb film grown on the GaSb$(00\bar1)$/Ga/P/Si(001) transition layer has the best structural and optical properties.

Keywords: molecular beam epitaxy, GaSb on Si(001), crystallographic orientation of the film, transition layers, antiphase domains, crystal perfection.

Received: 06.09.2022
Revised: 13.09.2022
Accepted: 13.09.2022

DOI: 10.21883/FTP.2022.10.53960.9954

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