Surface, interfaces, thin films

High hole mobility in boron delta-doped layers in diamond: why it is not achieved as yet and how it can be achieved

V. A. Kukushkin<sup>ab

a</sup> Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
^b Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia

Abstract: The required parameters of nanometer boron $\delta$-doped layers in diamond for achieving high conductivity and hole mobility are calculated. The boron concentration in such layers has to be sufficient to achieve the insulator–metal phase transition, i. e. metallic conductivity. Then, it is demonstrated that taking into account valence band edge energy shift due to the presence of ionized boron atoms leads to the significant deepening of the potential well formed by the $\delta$-doped layer for holes. It results in much stronger hole confinement than it was expected before. Thus, it is predicted that a significant delocalization-induced increase of hole mobility can be achieved if metallic boron $\delta$-doped layer thickness is of order and smaller than 0.5 nm and compensation ratio does not exceed 42%.

Keywords: $\delta$-doped layers, nanostructures, diamond films chemically deposited from the vapor phase, hole mobility, insulator-metal phase transition.

DOI: 10.21883/FTP.2022.10.53957.9872

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