Abstract:
The electrical and photovoltaic characteristics of the Ga$_2$O$_3$/$n$-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on $n$-GaAs epitaxial layers with concentration of $N_d$ = 9.5 $\cdot$ 10$^{14}$ cm$^{-3}$. The thickness of the oxide film was 120 nm. Measurements at a frequency of 10$^6$ Hz have shown that the capacitance–voltage and conductance–voltage dependences are described by curves characteristic of metal–insulator–semiconductor structures and exhibit low sensitivity to radiation with $\lambda$ = 254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with $\lambda$ = 254 nm are determined by the high density of traps at the Ga$_2$O$_3$/GaAs interface and in the oxide film.
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