This article is cited in 1 paper

Spectroscopy, interaction with radiation

Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement

A. A. Semakova^a, M. S. Ruzhevich^b, V. V. Romanov^a, N. L. Bazhenov^a, K. J. Mynbaev^ab, K. D. Moiseev<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b ITMO University, 197101 St. Petersburg, Russia

Abstract: The electroluminescent characteristics of the InAs/InAs$_{1-y}$Sb$_y$/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region ($y >$ 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 $\mu$m at low temperatures ($T <$ 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.

Keywords: heterojunctions, InAs, antimonides, electroluminescence, light-emitting diodes.

Received: 29.06.2022
Revised: 06.07.2022
Accepted: 04.08.2022

DOI: 10.21883/FTP.2022.09.53408.9925

 English version: Semiconductors, 2023, 57:5, 263–267

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