This article is cited in 1 paper

Non-electronic properties of semiconductors (atomic structure, diffusion)

Solubility of magnesium in silicon

V. B. Shuman^a, A. A. Lavrent'ev^a, A. A. Yakovleva^a, N. V. Abrosimov^b, A. N. Lodygin^a, L. M. Portsel'^a, Yu. A. Astrov<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany

Abstract: The solubility of impurity magnesium, which was introduced by diffusion in the temperature range of 1100–1300$^\circ$C in silicon, is studied by secondary-ion mass spectrometry. It is demonstrated that, with the electrically inactive impurity component taken into account, the maximum solubility of magnesium in silicon is 1–2 orders of magnitude lower (and the diffusion coefficient is higher) than the values reported earlier.

Keywords: silicon, doping, magnesium impurity, solubility.

Received: 12.05.2022
Revised: 22.06.2022
Accepted: 27.06.2022

DOI: 10.21883/FTP.2022.09.53405.9883

 English version: Semiconductors, 2023, 57:10, 465–468

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