XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power

I. V. Osinnykh^ab, I. A. Aleksandrov^a, T. V. Malin^a, K. S. Zhuravlev<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State University, 630090 Novosibirsk, Russia

Abstract: The results of the calculated and experimental depen-dence of the photoluminescence intensity on the excitation power density for silicon-doped GaN layers grown by molecular beam epitaxy are presented. A model was constructed for transitions in a compensated semiconductor upon interband generation of electron-hole pairs. It is shown that the dependence of the photoluminescence intensity on the excitation power density can be used to determine the recombination mechanism and concentrations of donors and acceptors in semiconductor.

Keywords: GaN, ammonia-MBE, photoluminescence, heterostructures, point defects.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.08.53148.34

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