XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Study of the crystalline state of mbe (013)HgCdTe/CdTe/ZnTe/GaAs heterostructure layers by the second harmonic generation method

S. A. Dvoretskii^ab, M. F. Stupak^c, N. N. Mikhailov^ad, S. N. Makarov^c, A. G. Yelesin^c, A. G. Verkhoglyad<sup>c

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Tomsk State University, 634050 Tomsk, Russia
^c Technological Design Institute of Scientific Instrument Engineering, Siberian Branch RAS, 630058 Novosibirsk, Russia
^d Novosibirsk State University, 634050 Tomsk, Russia

Abstract: The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle $\varphi$) and perpendicular to the growth direction (angle $\theta$) were studied by the method of second harmonic generation. A change in the angle $\varphi$ for CdTe layers was observed depending on the GaAs substrate orientation and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle $\theta$ was observed when growing the upper graded widegap MCT layer. The absolute value of the angle $\theta$ can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers.

Keywords: crystals of the sphalerite class, second harmonic, azimuthal angular dependencies, crystal perfection, Cd$_x$Hg$_{1-x}$Te heterostructures.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.08.53145.31

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