XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates

V. A. Zinovyev^a, A. S. Deryabin^a, A. V. Katsyuba^a, V. A. Volodin^ab, A. F. Zinov'eva^ab, S. G. Cherkova^a, Zh. V. Smagina^a, A. V. Dvurechenskii^ab, A. Yu. Krupin^c, O. M. Borodavchenko^d, V. D. Zhivulko^d, A. V. Mudryi<sup>d

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State University, 630090 Novosibirsk, Russia
^c Novosibirsk State Technical University, 630073 Novosibirsk, Russia
^d Scientific-Practical Materials Research Centre of NAS of Belarus, 220072 Minsk, Belarus

Abstract: Approaches to the formation of epitaxial structures containing two-dimensional Si and Ge layers embedded in a CaF$_2$ dielectric matrix have been developed. Raman study demonstrates the presence of narrow peaks related to Si–Si- and Ge–Ge-bond vibrations in the growth plane of structure. In the photoluminescence spectra of the created structures, emission bands, which can be associated with the radiative recombination of charge carriers in two-dimensional Si and Ge layers embedded in CaF$_2$ have been found.

Keywords: silicon, germanium, two dimensional, calcium fluoride, molecular beam epitaxy, electron irradiation, atomic structure, photoluminescence.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.08.53139.25

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