XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Phase transitions in silicon carbide epitaxial layers grown on a silicon substrate by the method of coordinated substitution of atoms

N. T. Bagraev^ab, S. A. Kukushkin^a, A. V. Osipov^a, V. L. Ugolkov<sup>c

a</sup> Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, Russia
^b Ioffe Institute, St. Petersburg, Russia
^c I. V. Grebenshchikov Institute of Silicate Chemistry of the Russian Academy of Sciences, Saint-Petersburg, Russia

Abstract: Temperature dependences of the longitudinal resis- tance and heat capacity of silicon carbide epitaxial films grown on monocrystalline silicon substrates by the method of coordinated substitution of atoms are investigated. Peculiarities in the behavior of these dependences have been found at temperatures equal to 56, 76, 122 and 130$^\circ$C. The observed peculiarities of the behavior of heat capacity and longitudinal resistance, considering appearance of a giant value of diamagnetism previously discovered in the samples at these temperatures, are interpreted as phase transitions of charge carriers into a coherent (superconducting, if we consider diamagnetism) state.

Keywords: silicon carbide on silicon, atom substitution method, carbon vacancy structures, terahertz radiation, nanostructure, quantum faraday effect, superconductivity, Meissner–Ochsenfeld effect, Josephson effect, heat capacity.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.07.52766.24

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