XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

GaN quantum dots formation by temperature increase in ammonia flow

J. E. Maidebura, T. V. Malin, K. S. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia

Abstract: The transformation of a two-dimensional GaN layer into three-dimensional islands (2D–3D transition) with an increase in temperature in an ammonia flow was experimentally studied by the reflection high-energy electron diffraction method. The results were explained in the framework of the previously developed kinetic model and the Mariette equilibrium model. It is shown that with increasing temperature due to the desorption processes of NH$_2$ particles the surface energy increases, the 3D surface state becomes energetically favorable and 3D islands are formed. With further increase in temperature due to dissociation processes of NH$_2$ and NH particles, the surface energy decreases and the 2D surface state becomes energetically favorable again, resulting in 3D islands transforming back to 2D layer.

Keywords: GaN, quantum dots, surface processes, RHEED, MBE.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.07.52757.12

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