XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

The influence of a single radiation defect cluster forming on the transistor structure channel conductivity

I. Yu. Zabavichev^ab, A. S. Puzanov^ab, S. V. Obolensky<sup>ab

a</sup> National Research Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
^b Sedakov Scientific Research Institute of Measurement Systems, 603950 Nizhny Novgorod, Russia

Abstract: The effect of a single radiation defects cluster formation on the characteristics of short-channel structures was studied. Estimates of the nuclear particle energy, capable of forming a cluster of radiation defects, causing a failure and modern silicon transistors failure with various channel sizes.

Keywords: short channel transistor, radiation defect cluster, single event.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.07.52752.07

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