Semiconductor physics

On the formation of low-resistivity contacts for 4H-SiC bipolar devices

A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, A. V. Serkov, D. A. Chigirev

Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia

Abstract: The results of studies on the development of technological methods for the formation of low-resistivity contact systems to $n$- and $p$-SiC based on single and multilayer Ni-, Al- and Ti-compositions for 4H-SiC based bipolar devices are presented. It is shown that the formation of low-resistivity contacts based on Ni to $n$-4H-SiC ($\rho_c$ = 3.6$\cdot$10$^{-4}$ Ohm$\cdot$cm$^2$) and Ni/Al to $p$-4H-SiC ($\rho_c$ = 5.9$\cdot$10$^{-5}$ Ohm$\cdot$cm$^2$) is possible within a single cycle of vacuum annealing at 1000$^\circ$ C for 120 s. This technological solution makes it possible to reduce the number of high-temperature processes.

Keywords: 4H-SiC, $n$-type, $p$-type, ohmic contacts, RTA, TLM, specific contact resistivity.

Received: 01.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.06.52598.9827

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