Semiconductor physics

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

A. M. Ivanov, A. V. Klochkov

Ioffe Institute, St. Petersburg

Abstract: Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered.

Keywords: external quantum efficiency, low-frequency noise, carrier transport, defect tunneling.

Received: 20.02.2022
Revised: 24.03.2022
Accepted: 24.03.2022

DOI: 10.21883/FTP.2022.06.52596.9817

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