Amorphous, glassy, organic semiconductors

Polarization processes in thin layers of glassy hybrid system Ge$_{28.5}$Pb$_{14.0}$Fe$_{1.0}$S$_{56.5}$

R. A. Castro-Arata^a, G. I. Grabko^b, A. A. Kononov^a, N. I. Anisimova^a, M. Krbal^c, A. V. Kolobov<sup>a

a</sup> Herzen State Pedagogical University of Russia, 191186 St. Petersburg, Russia
^b Zabaikalsky State University, 672039 Chita, Russia
^c University of Pardubice, 530 02 Pardubice, Czech Republic

Abstract: The results of the investigations of the polarization properties in thin layers of vitreous Ge$_{28.5}$Pb$_{14.0}$Fe$_{1.0}$S$_{56.5}$ are presented. A process of dipole-relaxation polarization was discovered, the activation energy of which turned out to be equal to $E_a$ = (0.97 $\pm$ 0.14) eV. It has been determined that charge transfer in the Ge$_{28.5}$Pb$_{14.0}$Fe$_{1.0}$S$_{56.5}$ hybrid system is a thermally activated process with an activation energy of $E_a$ = (0.4 $\pm$ 0.01) eV. The calculation results allow us to conclude that the glass-forming capacity of the (Ge$_{28.5}$Pb$_{14.0}$Fe$_{1.0}$S$_{56.5}$)$_{100-x}$Fe$_x$ system decreases linearly with an increase in the proportion of metal in the glass structure.

Keywords: charge carrier hopping, thin layers, hybrid chalcogenide, lone-pair electrons.

Received: 24.02.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.06.52589.9843

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