This article is cited in 1 paper

Spectroscopy, interaction with radiation

The excitation efficiency for dislocation-related luminescence centers in silicon with oxygen precipitates

N. A. Sobolev, A. E. Kalyadin, K. F. Shtel'makh, E. I. Shek, V. I. Sakharov, I. T. Serenkov

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in $p$-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in microelectronics technology while D1 and D2 dislocation-related luminescence centers were produced during subsequent annealing in a flow of argon at 1000$^\circ$C. The photoluminescence excitation efficiencies for the D1 and D2 lines were measured at a temperature of liquid helium.

Keywords: dislocation-related luminescence, silicon, oxygen precipitates, photoluminescence excitation efficiency.

Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022

DOI: 10.21883/FTP.2022.06.52585.9832

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