Semiconductor physics

Influence of formation conditions of silicon diodes on their reverse currents

S. V. Bulyarskii^ab, E. P. Kitsyuk^b, A. V. Lakalin^ab, M. A. Saurov^b, V. V. Svetukhin^b, A. P. Orlov^a, G. A. Rudakov<sup>a

a</sup> Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, 119991 Moscow, Russia
^b SPC "Technological Center", 124498 Zelenograd, Moscow, Russia

Abstract: In this work, a study was made of the influence of silicon diode manufacturing technology on the emergence of generation and recombination centers. The electrical characteristics of $p$–$n$ junctions formed in different ways on $n$-type silicon substrates were compared: a) the $p$-type layer was created by the diffusion method; b) the $p$-type layer was formed by ion implantation into an epitaxial $n$-layer preliminarily grown on the substrate; c) two $n$- and $p$-type epitaxial layers were successively deposited on the substrate. It has been established that for diodes based on a double epitaxial layer, the direct and reverse current-voltage characteristics (CVC) are due to the diffusion mechanism, and the structures themselves have a low concentration of recombination centers. At the same time, in diodes based on the diffusion method and ion implantation, the CVCs are due to the generation-recombination mechanism. With reverse bias, electron-phonon processes play a significant role in the formation of the CVC, and with forward bias, carrier recombination in the region of the space charge of the $p$–$n$ junction. The concentrations and energies of recombination centers have been determined.

Keywords: forward and reverse current-voltage characteristic, $p$–$n$ junction, diffusion, ion implantation, epitaxy, recombination centers, the Poole–Frenkel effect, electron-phonon interaction.

Received: 24.01.2022
Revised: 31.01.2022
Accepted: 31.01.2022

DOI: 10.21883/FTP.2022.05.52354.9807

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